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mm3z2v2b~mm3z39b silicon planar zener diodes features ? total power dissipation : max. 300 mw ? small plastic package suitable for surface mounted design ? high reliability description silicon planar zener diode in a small plastic smd sod-323 package absolute maximum ratings (t a = 25 o c) parameter symbol value unit power dissipation p tot 300 mw junction temperature t j 150 o c storage temperature range t stg - 55 to + 150 o c characteristics at t a = 25 o c parameter symbol max. unit thermal resistance junction to ambient air r tha 417 o c/w forward voltage at i f = 10 ma v f 0.9 v anode 2 top view simplified outline sod-323 and symbol 1 2 pinning 1 pin cathode description 1 date:2011/05 www.htsemi.com semiconductor jinyu
characteristics at t a = 25 o c type marking code zener voltage range 1) dynamic impedance reverse leakage current v znom l zt for v zt z zt (max.) at i zt i r (max.) at v r v ma v ? ma a v mm3z2v2b mf 2.2 5 2.1...2.4 100 5 120 0.7 mm3z2v4b 7c 2.4 5 2.3?2.65 100 5 120 1 mm3z2v7b 7d 2.7 5 2.65?2.95 110 5 120 1 MM3Z3V0B 7e 3.0 5 2.95?3.25 120 5 50 1 mm3z3v3b 7f 3.3 5 3.25?3.55 120 5 20 1 mm3z3v6b 7h 3.6 5 3.6?3.845 100 5 10 1 mm3z3v9b 7j 3.9 5 3.89?4.16 100 5 5 1 mm3z4v3b 7k 4.3 5 4.17?4.43 100 5 5 1 mm3z4v7b 7m 4.7 5 4.55?4.75 100 5 2 1 mm3z5v1b 7n 5.1 5 4.98?5.2 80 5 2 1.5 mm3z5v6b 7p 5.6 5 5.49?5.73 60 5 1 2.5 mm3z6v2b 7r 6.2 5 6.06?6.33 60 5 1 3 mm3z6v8b 7x 6.8 5 6. 65?6.93 40 5 0.5 3.5 mm3z7v5b 7y 7.5 5 7.28?7.6 30 5 0.5 4 mm3z8v2b 7z 8.2 5 8.02?8.36 30 5 0.5 5 mm3z9v1b 8a 9.1 5 8.85?9.23 30 5 0.5 6 mm3z10b 8b 10 5 9.77?10.21 30 5 0.1 7 mm3z11b 8c 11 5 10.76?11.22 30 5 0.1 8 mm3z12b 8d 12 5 11.74?12.24 30 5 0.1 9 mm3z13b 8e 13 5 12.91?13.49 37 5 0.1 10 mm3z15b 8f 15 5 14.34?14.98 42 5 0.1 11 mm3z16b 8h 16 5 15.85?16.51 50 5 0.1 12 mm3z18b 8j 18 5 17.56?18.35 65 5 0.1 13 mm3z20b 8k 20 5 19.52?20.39 85 5 0.1 15 mm3z22b 8m 22 5 21.54?22.47 100 5 0.1 17 mm3z24b 8n 24 5 23.72?24.78 120 5 0.1 19 mm3z27b 8p 27 5 26.19?27.53 150 5 0.1 21 mm3z30b 8r 30 5 29.19?30.69 200 5 0.1 23 mm3z33b 8x 33 5 32.15?33.79 250 5 0.1 25 mm3z36b 8y 36 5 35.07?36.87 300 5 0.1 27 mm3z39b 8z 39 5 37?41 100 5 2 30 1) v z is tested with pulses (20 ms). mm3z2v2b~mm3z39b 2 date:2011/05 www.htsemi.com semiconductor jinyu
ambient temperature: ta ( c) o 0 25 100 150 0 100 200 300 power dissipation: ptot (mw) derating curve mm3z2v2b~mm3z39b 3 date:2011/05 www.htsemi.com semiconductor jinyu
package outline plastic surface mounted package; 2 leads sod-323 a mm unit b d ce h e b a d a c h e p 1.10 0.80 0.40 0.25 0.15 0.10 1.80 1.60 1.35 1.15 2.80 2.30 e p mm3z2v2b~mm3z39b 4 date:2011/05 www.htsemi.com semiconductor jinyu

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